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APT80GA60B APT80GA60S
600V High Speed PT IGBT
-2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT80GA60S poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Single die IGBT
(R)
TO
APT80GA60B
D3PAK
FEATURES
* Fast switching with low EMI * Very Low Eoff for maximum efficiency * Ultra low Cres for improved noise immunity * Low conduction loss * Low gate charge * Increased intrinsic gate resistance for low EMI * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * High power PFC boost * Welding * UPS, solar, and other inverters * High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol
Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL
Parameter
Collector Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current Gate-Emitter Voltage 2 Total Power Dissipation @ TC = 25C Switching Safe Operating Area @ TJ = 150C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
1
Ratings
600 143 80 240 30 625 240A @ 600V -55 to 150 300
Unit
V
A
V W
C
Static Characteristics
Symbol
VBR(CES) VCE(on) VGE(th) ICES IGES
TJ = 25C unless otherwise specified
Test Conditions
VGE = 0V, IC = 1.0mA VGE = 15V, IC = 47A VCE = 600V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C
Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
Min
600
Typ
Max
Unit
2.0 1.9 4.5
2.5 6 250 1000 100
V
VGE =VCE , IC = 1mA
A nA
6 - 2009 052-6323 Rev C
VGS = 30V
Thermal and Mechanical Characteristics
Symbol
RJC WT Torque
Characteristic
Junction to Case Thermal Resistance Package Weight Mounting Torque (TO-247 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com
Min
-
Typ
5.9
Max
0.2 -
Unit
C/W g in*lbf
10
Dynamic Characteristics
Symbol
Cies Coes Cres Qg3 Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff6 td(on tr td(off) tf Eon2 Eoff6
TJ = 25C unless otherwise specified
Test Conditions
Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 47A TJ = 150C, RG = 4.74, VGE = 15V, L= 100uH, VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V IC = 47A RG = 4.74 TJ = +25C Inductive Switching (125C) VCC = 400V VGE = 15V IC = 47A RG = 4.74 TJ = +125C 23 27 158 78 840 751 21 31 194 132 1275 1112 240
APT80GA60B_S
Min Typ
6390 580 63 230 40 78 nC pF
Parameter
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy
Max
Unit
A
ns
J
ns
J
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6323 Rev C
6 - 2009
Typical Performance Curves
150
V
GE
APT80GA60B_S
300 275 TJ= 150C IC, COLLECTOR CURRENT (A) 250 225 200 175 150 125 100 75 50 25 5V 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 47A C T = 25C
J
= 15V
TJ= 125C TJ= 55C
15V
12V 13V
IC, COLLECTOR CURRENT (A)
125 100 75 50 25 0 TJ= 25C
10V
9V
8V
360 320 IC, COLLECTOR CURRENT (A) 280 240 200 160 120 80 40 0
0 1 2 3 4 5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
0
16 14 12 10 8 6 4 2 0
VCE = 120V VCE = 300V VCE = 480V
TJ= 25C TJ= 125C 0 2 4 6 TJ= -55C 8 10 12
0
4
8
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4
VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
5
12 15 200 240 GATE CHARGE (nC) FIGURE 4, Gate charge
280
3
IC = 94A IC = 47A
4 IC = 94A IC = 47A 2 IC = 23.5A 1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
3
2
IC = 23.5A
1
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage 1.10
0
6
50 100 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 150 125 100 75 50 25 0 6 - 2009 25 50 052-6323 Rev C
0
0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.05 1.00 0.95 0.90 0.85 0.80 0.75 -.50 -.25 IC, DC COLLECTOR CURRENT (A)
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature
Typical Performance Curves
30 28 26 24 22 20 18 16 td(OFF), TURN-OFF DELAY TIME (ns)
VCE = 400V TJ = 25C, or 125C RG = 4.7 L = 100H
300 250
VGE =15V,TJ=125C
APT80GA60B_S
td(ON), TURN-ON DELAY TIME (ns)
VGE = 15V
200 150 100 50 0
VCE = 400V RG = 4.7 L = 100H VGE =15V,TJ=25C
0
20
40
60
80
100
0
20
40
60
80
100
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 100 RG = 4.7, L = 100H, VCE = 400V 80
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 160 140 120 tr, FALL TIME (ns) 100 80 60 40 20
RG = 4.7, L = 100H, VCE = 400V TJ = 25C, VGE = 15V TJ = 125C, VGE = 15V
tr, RISE TIME (ns)
60
40
20
TJ = 25 or 125C,VGE = 15V
0
0
20
40
60
80
100
0
0
20
40
60
80
100
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 4000 EOFF, TURN OFF ENERGY LOSS (J) Eon2, TURN ON ENERGY LOSS (J)
V = 400V CE V = +15V GE R =4.7
G
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 3500 3000 2500 2000 1500 1000 500 0
TJ = 25C TJ = 125C
V = 400V CE V = +15V GE R = 4.7
G
3000
TJ = 125C
2000
1000
TJ = 25C
0 20 40 60 80 100 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 8000 SWITCHING ENERGY LOSSES (J) 7000 6000
Eoff,94A
V = 400V CE V = +15V GE T = 125C
J
0
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 4000 SWITCHING ENERGY LOSSES (J)
V = 400V CE V = +15V GE R = 10
G
0
20
40
60
80
100
Eon2,94A
Eon2,94A Eoff,94A
3000
5000 4000 3000 2000 1000 0 0
Eoff,47A Eon2,23A Eoff,23A Eon2,47A
2000
Eon2,47A
6 - 2009
1000
Eoff,47A Eon2,23A
052-6323 Rev C
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
Eoff,23A
0
Typical Performance Curves
10000 1000 Cies IC, COLLECTOR CURRENT (A) 100
APT80GA60B_S
C, CAPACITANCE (pF)
1000
Coes 100 Cres
10
1
0 100 200 300 400 500 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
10
0.1
1
10
100
1000
VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0.25 ZJC, THERMAL IMPEDANCE (C/W)
0.20
D = 0.9 0.7 0.5 0.3
Note:
0.15
0.10
PDM
t1 t2
0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE 10-3 10-2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
0.1
1
RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
052-6323 Rev C
6 - 2009
APT80GA60B_S
10% Gate Voltage td(on) 90% Collector Current TJ = 125C
APT30DQ60
tr
V CC IC V CE
5%
10%
5% Collector Voltage
A D.U.T.
Switching Energy
Figure 20, Inductive Switching Test Circuit
Figure 21, Turn-on Switching Waveforms and Definitions
90% td(off)
TJ = 125C Gate Voltage
Collector Voltage tf 10%
0
Collector Current
Switching Energy
Figure 22, Turn-off Switching Waveforms and Definitions
TO-247 (B) Package Outline
e3 100% Sn Plated
(Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D3PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 13.41 (.528) 13.51(.532)
Collector
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15(.045)
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
6 - 2009
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
Gate Collector
Heat Sink (Drain) and Leads are Plated
Emitter
2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs.
052-6323 Rev C
Emitter Collector
Dimensions in Millimeters and (Inches)
Gate Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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